首页> 外文OA文献 >The effect of sol–gel preparation conditions on structural characteristics and magnetic properties of M-type barium hexaferrite thin films
【2h】

The effect of sol–gel preparation conditions on structural characteristics and magnetic properties of M-type barium hexaferrite thin films

机译:溶胶-凝胶制备条件对M型六方铁酸钡薄膜结构特性和磁性的影响

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

© 2015, Springer Science+Business Media New York. Abstract: We have shown the possibility to obtain M-type barium hexaferrite thin films with thickness of ~200–450 nm on the surface of dielectric α-AlO substrates with low microwave dielectric loss (tan δ ~ 10 GHz) by a sol–gel method. For the production of high-dense homogeneous thin films of M-type barium hexaferrite (BaFeO, BHF) with nanorod-like grains and a uniform distribution of iron and barium ions, we have studied the synthesis conditions for thermally stable film-forming solutions with high concentrations of barium ions. Films with a c-axis magnetic texture were obtained by spin-coating the former solutions on α-AlO substrates and annealing at temperatures between 473 and 1073 K. The resulting textured M-type BHF films have demonstrated the following magnetic parameters: H = 334 kA/m, H = 167 kA/m; M = 0.005 emu, M = 0.003 emu for the films’ thickness of ~200 nm, and H = 360 kA/m, H = 338 kA/m; M = 0.009 emu, M = 0.007 emu for the films’ thickness of ~450 nm. These M-type BHF thin films can serve as a promising basis for further development of multilayer microwave resonant elements. Graphical Abstract: [Figure not available: see fulltext.]
机译:©2015,Springer Science +商业媒体纽约。摘要:我们已经显示出有可能通过溶胶-凝胶法在具有低微波介电损耗(tanδ〜10 GHz)的电介质α-AlO基板表面上获得厚度约为200-450 nm的M型六价铁氧体薄膜方法。为了生产具有纳米棒状晶粒且铁和钡离子分布均匀的M型六方铁酸钡(BaFeO,BHF)高密度均质薄膜,我们研究了热稳定成膜溶液的合成条件高浓度的钡离子。通过将前者溶液旋涂在α-AlO衬底上并在473和1073K之间的温度下退火,可获得具有c轴磁织构的薄膜。所得的织构M型BHF薄膜具有以下磁参数:H = 334 kA / m,H = 167 kA / m; M = 0.005 emu,M = 0.003 emu,表示膜的厚度约为200 nm,H = 360 kA / m,H = 338 kA / m; M = 0.009 emu,膜厚约450 nm的M = 0.007 emu。这些M型BHF薄膜可作为进一步开发多层微波谐振元件的有前途的基础。图形摘要:[该图不可用:请参见全文。]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号